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this is information on a product in full production. july 2014 docid026409 rev 2 1/20 20 stgb30h60dlfb, STGW30H60DLFB trench gate field-stop igbt, hb series 600 v, 30 a high speed datasheet - production data figure 1. internal schematic diagram features ? designed for soft commutation only ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? v ce(sat) = 1.55 v (typ.) @ i c = 30 a ? low v f soft recovery co-packaged diode ? tight parameters distribution ? safe paralleling ? low thermal resistance ? lead free package applications ? microwave oven ? resonant converters description these devices are igbts developed using an advanced proprietary trench gate and field stop structure. the device is part of the new "hb" series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. furthermore, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. to-247 1 2 3 d 2 pak 1 3 tab c (2, tab) e (3) g (1) table 1. device summary order code marking package packaging stgb30h60dlfb gb30h60dlfb d 2 pak tape and reel STGW30H60DLFB gw30h60dlfb to-247 tube www.st.com
contents stgb30h60dlfb, STGW30H60DLFB 2/20 docid026409 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 d 2 pak, stgb30h60dlfb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 to-247, STGW30H60DLFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
docid026409 rev 2 3/20 stgb30h60dlfb, STGW30H60DLFB electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c continuous collector current at t c = 25 c 60 a i c continuous collector current at t c = 100 c 30 a i cp (1) 1. pulse width limited by ma ximum junction temperature. pulsed collector current 120 a i f continuous forward current t c = 25 c 60 a continuous forward current t c = 25 c 30 a i fp (1) pulsed forward current 120 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 260 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit d 2 pak to-247 r thjc thermal resistance junction-case igbt 0.58 c/w thermal resistance junction-case diode 2.08 c/w r thja thermal resistance junction-ambient 62.5 50 c/w
electrical characteristics stgb30h60dlfb, STGW30H60DLFB 4/20 docid026409 rev 2 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 30 a 1.55 2 v v ge = 15 v, i c = 30 a t j = 125 c 1.65 v ge = 15 v, i c = 30 a t j = 175 c 1.75 v f forward on-voltage i f = 30 a 1.4 1.7 v i f = 30 a t j = 125 c 1.2 i f = 30 a t j = 175 c 1.05 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 600 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -3659- pf c oes output capacitance - 101 - pf c res reverse transfer capacitance -76-pf q g total gate charge v cc = 520 v, i c = 30 a, v ge = 15 v, see figure 26 -149-nc q ge gate-emitter charge - 25 - nc q gc gate-collector charge - 62 - nc
docid026409 rev 2 5/20 stgb30h60dlfb, STGW30H60DLFB electrical characteristics table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(off) turn-off delay time v ce = 400 v, i c = 30 a, r g = 10 , v ge = 15 v, see figure 25 146 - ns t f current fall time - 23 - ns e off (1) 1. turn-off losses include also the tail of the collector current. turn-off switching losses - 293 - j t d(off) turn-off delay time v ce = 400 v, i c = 30 a, r g = 10 , v ge = 15 v, t j = 175 c, see figure 25 -158- ns t f current fall time - 65 - ns e off (1) turn-off switching losses - 572 - j table 7. igbt switching characteristics (capacitive load) symbol parameter test conditions min. typ. max. unit e off (1) 1. turn-off losses include also the tail of the collector current. turn-off switching losses v cc = 320 v, v ge = 150 v, r g =20 , i c = 30 a, l = 100 h, c snub = 20 nf (see figure 25 ) -150- j v cc = 320 v, v ge = 150 v, r g =20 , i c = 30 a, l = 100 h, c snub = 20 nf, t j = 175 c (see figure 25 ) -300-
electrical characteristics stgb30h60dlfb, STGW30H60DLFB 6/20 docid026409 rev 2 2.1 electrical characteristics (curve) figure 2. power dissipation vs. case temperature figure 3. collector current vs. case temperature p tot 150 100 0 0 50 t c (c) 75 (w) 25 100 125 150 50 200 175 250 v ge 15v, t j 175 c gipg280120141353fsr i c 60 40 20 0 0 50 t c (c) 75 (a) 25 100 125 150 v ge 15v, t j 175 c gipg280120141346fsr figure 4. output characteristics (t j = 25c) figure 5. output characteristics (t j = 175c) i c 60 40 20 0 0 2 v ce (v) 4 (a) 13 80 100 11v v ge =15 v 9v 13v gipg280120141156fsr i c 60 40 20 0 0 2 v ce (v) 4 (a) 13 80 100 11v v ge =15 v 9v 13v 7v gipg280120141206fsr figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current v ce(sat) 1.8 1.6 1.4 1.2 -50 0 t j (c) (v) 50 100 150 2.2 2.0 v ge = 15v i c = 60a i c = 30a i c = 15a gipg280120141440fsr v ce(sat) 1.6 1.4 1.2 0 30 i c (a) (v) 40 50 2.2 2.0 1.8 v ge = 15v t j = 175c t j = 25c t j = -40c 20 gipg280120141446fsr
docid026409 rev 2 7/20 stgb30h60dlfb, STGW30H60DLFB electrical characteristics figure 8. collector current vs. switching frequency figure 9. forward bias safe operating area 0 10 20 30 40 110 ic [a] f [khz] g rectangular current shape, (duty cycle=0.5, v cc = 400v, r =10 , v ge = 0/15 v, t j =175c) tc=80 c tc=100 c 50 60 gipg260620141544fsr i c 100 10 1 0.1 1 v ce (v) (a) 10 100 10 s 100 s 1 ms (single pulse t c = 25c, t j 175 c; v ge =15v) v ce(sat) limit gipg280120141450fsr figure 10. transfer characteristics figure 11. diode v f vs. forward current i c 60 40 20 0 7 11 v ge (v) (a) 913 80 100 v ce =10 v 25 c 175 c gipg280120141330fsr v f 1.6 1.2 0.8 0.4 10 i f (a) (v) 20 t j = 175c 30 40 50 t j = 25c t j = -40c 2.0 gipg260620141554fsr figure 12. normalized v ge(th) vs junction temperature figure 13. normalized v (br)ces vs. junction temperature v ge(th) (norm) 0.8 0.7 0.6 -50 t j (c) 0 50 100 150 0.9 1.0 v ce = v ge i c = 1ma am16060v1 v (br)ces (norm) 1.1 1.0 0.9 -50 t j (c) 0 50 100 150 i c = 2ma am16059v1
electrical characteristics stgb30h60dlfb, STGW30H60DLFB 8/20 docid026409 rev 2 figure 14. capacitance variation figure 15. gate charge vs. gate-emitter voltage c(pf) 1000 100 10 0.1 v ce (v) 110 c ies c oes c res 100 gipg280120141707fsr v ge (v) 4 2 0 0 q g (nc) 40 80 120 160 6 8 10 12 14 v cc = 520v, i c = 30a i g = 1ma 16 gipg280120141455fsr figure 16. switching loss vs collector current figure 17. switching loss vs gate resistance e (j) 400 200 0 0 i c (a) 20 40 60 600 v cc = 400v, v ge = 15v r g = 10, t j = 175c e off 1000 800 1200 gipg280120141606fsr e (j) 700 500 0 r g () 10 20 30 800 v cc = 400v, v ge = 15v i c = 30a, t j = 175 c 40 e off 600 900 1000 gipg280120141536fsr figure 18. switching loss vs temperature figure 19. switching loss vs collector-emitter voltage e (j) 400 200 0 20 t j (c) 40 60 80 100 600 v cc = 400v, v ge = 15v r g = 10, i c = 30a 120 e off 140 160 gipg280120141532fsr e (j) 400 200 0 150 v ce (v) 250 350 450 600 t j = 175c, v ge = 15v r g = 10, i c = 30a e off 800 gipg280120141610fsr
docid026409 rev 2 9/20 stgb30h60dlfb, STGW30H60DLFB electrical characteristics figure 20. switching times vs. collector current figure 21. switching times vs. gate resistance t i c (a) (ns) 0 10 20 10 30 t f t j = 175c, v ge = 15v, r g = 10, v cc = 400v t doff 100 40 50 gipg300620141033fsr t 10 r g () (ns) 01020 100 30 t f t j = 175c, v ge = 15v, i c = 30a, v cc = 400v 40 t doff gipg300620141039fsr figure 22. switching-off losses vs. capacitive load e off 50 c(nf) (j) 02040 100 60 l snub = 100h, v ge = 15v, i c = 30a, v cc = 320v 80 t j = 175c t j = 25c 150 200 250 300 gipg300620141047fsr
electrical characteristics stgb30h60dlfb, STGW30H60DLFB 10/20 docid026409 rev 2 figure 23. thermal impedance for igbt figure 24. thermal impedance for diode 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 zthto2t_b
docid026409 rev 2 11/20 stgb30h60dlfb, STGW30H60DLFB test circuits 3 test circuits figure 25. test circuit for inductive load switching figure 26. gate charge test circuit figure 27. switching waveform figure 28. diode reverse recovery waveform am01504v1 am01505v1 k k k k k k am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10% am01507v1 i rrm i f di/dt t rr t s t f q rr i rrm t v rrm dv/dt
package mechanical data stgb30h60dlfb, STGW30H60DLFB 12/20 docid026409 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. 4.1 d 2 pak, stgb30h60dlfb figure 29. d2pak (to-263) drawing 0079457_u
docid026409 rev 2 13/20 stgb30h60dlfb, STGW30H60DLFB package mechanical data table 8. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 7.75 8.00 d2 1.10 1.30 1.50 e 10 10.40 e1 8.50 8.70 8.90 e2 6.85 7.05 7.25 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stgb30h60dlfb, STGW30H60DLFB 14/20 docid026409 rev 2 figure 30. d2pak footprint (a) a. all dimension are in millimeters. 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid026409 rev 2 15/20 stgb30h60dlfb, STGW30H60DLFB package mechanical data 4.2 to-247, STGW30H60DLFB figure 31. to-247 drawing 0075325_g
package mechanical data stgb30h60dlfb, STGW30H60DLFB 16/20 docid026409 rev 2 table 9. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid026409 rev 2 17/20 stgb30h60dlfb, STGW30H60DLFB packaging mechanical data 5 packaging mechanical data figure 32. tape p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
packaging mechanical data stgb30h60dlfb, STGW30H60DLFB 18/20 docid026409 rev 2 figure 33. reel table 10. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
docid026409 rev 2 19/20 stgb30h60dlfb, STGW30H60DLFB revision history 6 revision history table 11. document revision history date revision changes 04-jul-2014 1 initial release. 23-jul-2014 2 document status promoted from preliminary data to production data
stgb30h60dlfb, STGW30H60DLFB 20/20 docid026409 rev 2 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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